Jan 15, 2014 · CMOS Process Flow N Well P Well P • A high temperature drive-in produces the “final” well depths and repairs implant damage Typically 4-6 hours @ 1000 ˚C - 1100 ˚C or equivalent Dt 10 CMOS Process Flow Boron P N Well P Well P • Mask #4 is used to mask the PMOS devices
